Everipedia Logo
Everipedia is now IQ.wiki - Join the IQ Brainlist and our Discord for early access to editing on the new platform and to participate in the beta testing.
Boule (crystal)

Boule (crystal)

Monocrystalline silicon boule

Monocrystalline silicon boule

A boule is a single crystal ingot produced by synthetic means.[1]

A boule of silicon is the starting material for most of the integrated circuits used today. In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique[2] and the Czochralski process, which result in a cylindrical rod of material.

In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and slowly extracted. The molten silicon grows on the seed crystal in a crystalline fashion. As the seed is extracted the silicon solidifies and eventually a large, cylindrical boule is produced.[3]

A semiconductor crystal boule is normally cut into circular wafers using an inside hole diamond saw or diamond wire saw, and each wafer is lapped and polished to provide substrates suitable for the fabrication of semiconductor devices on its surface.[4]

The process is also used to create sapphires, which are used for substrates in the production of blue and white LEDs, optical windows in special applications and as the protective covers for watches.[5]

Crystallization
Concepts
Crystallization**·** Crystal growth
Recrystallization**·** Seed crystal
Protocrystalline**·** Single crystal
Methods and technology
Boules
Bridgman–Stockbarger technique
Crystal bar process
Czochralski process
Epitaxy
Flux method
Fractional crystallization
Fractional freezing
Hydrothermal synthesis
Kyropoulos process
Laser-heated pedestal growth
Micro-pulling-down
Shaping processes in crystal growth
Skull crucible
Verneuil process
Zone melting
Fundamentals
Nucleation**·** Crystal
Crystal structure· Solid

References

[1]
Citation Linkbooks.google.co.uk"Fundamentals of Silicon Carbide Technology: Growth, Characterization". Retrieved March 1, 2017.
Sep 27, 2019, 9:58 AM
[2]
Citation Linkbooks.google.co.ukSpringer Handbook of Crystal Growth. 2010. Retrieved February 25, 2017.
Sep 27, 2019, 9:58 AM
[3]
Citation Linkbooks.google.co.uk"Continuous Czochralski Process Development". Retrieved March 1, 2017.
Sep 27, 2019, 9:58 AM
[4]
Citation Linkbooks.google.comBOSE (2013). IC Fabrication Technology. McGraw Hill Education (India) Pvt Ltd. p. 53. ISBN 978-1-259-02958-5.
Sep 27, 2019, 9:58 AM
[5]
Citation Linkbooks.google.comJ.-P. Colinge (29 February 2004). Silicon-on-Insulator Technology: Materials to VLSI: Materials to Vlsi. Springer Science & Business Media. p. 12. ISBN 978-1-4020-7773-9.
Sep 27, 2019, 9:58 AM
[6]
Citation Linkbooks.google.co.uk"Fundamentals of Silicon Carbide Technology: Growth, Characterization"
Sep 27, 2019, 9:58 AM
[7]
Citation Linkbooks.google.co.ukSpringer Handbook of Crystal Growth
Sep 27, 2019, 9:58 AM
[8]
Citation Linkbooks.google.co.uk"Continuous Czochralski Process Development"
Sep 27, 2019, 9:58 AM
[9]
Citation Linkbooks.google.comIC Fabrication Technology
Sep 27, 2019, 9:58 AM
[10]
Citation Linkbooks.google.comSilicon-on-Insulator Technology: Materials to VLSI: Materials to Vlsi
Sep 27, 2019, 9:58 AM
[11]
Citation Linken.wikipedia.orgThe original version of this page is from Wikipedia, you can edit the page right here on Everipedia.Text is available under the Creative Commons Attribution-ShareAlike License.Additional terms may apply.See everipedia.org/everipedia-termsfor further details.Images/media credited individually (click the icon for details).
Sep 27, 2019, 9:58 AM